MT9HTF6472RHY-667D1 Micron Technology Inc, MT9HTF6472RHY-667D1 Datasheet - Page 21

• Manufacturer Part Number: MT9HTF6472RHY-667D1
• Description: MODULE DDR2 512MB 200-SORDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472RHY-667D1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 200-SORDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 4: Hysteresis Applied to Temperature Around Trip Points
Table 23: Hysteresis Applied to Alarm Window Bits in the Temperature Register
Temperature Format
PDF: 09005aef828742dd
htf9c64_128x72rh.pdf - Rev. D 3/10 EN
Condition
Clears
Sets
Above window bit
Below window bit
Notes:
The temperature trip point registers and temperature readout register use a 2’s comple-
ment format to enable negative numbers. The least significant bit (LSB) is equal to
0.0625°C or 0.25°C, depending on which register is referenced. For example, assuming
an LSB of 0.0625°C:
• A value of 0x018C would equal 24.75°C
• A value of 0x06C0 would equal 108°C
• A value of 0x1E74 would equal –24.75°C
Temperature
1. T
2. T
3. Hyst is the value set in the hysteresis bits of the configuration register.
Gradient
Falling
Rising
T
T
Below Alarm Window Bit
H
L
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SORDIMM
H
L
is the value set in the alarm temperature lower boundary trip register.
2
is the value set in the alarm temperature upper boundary trip register.
1
Temperature Sensor with Serial Presence-Detect EEPROM
Critical Temperature
T
L
- Hyst
21
T
L
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Temperature
Gradient
T
Falling
Rising
H
Above Alarm Window Bit
-
Hyst
3
© 2007 Micron Technology, Inc. All rights reserved.
T
L
-
Critical Temperature
Hyst
T
H
- Hyst
T
H