MT9HTF6472RHY-667D1 Micron Technology Inc, MT9HTF6472RHY-667D1 Datasheet - Page 20

• Manufacturer Part Number: MT9HTF6472RHY-667D1
• Description: MODULE DDR2 512MB 200-SORDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472RHY-667D1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 200-SORDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 22: Configuration Register Bit Descriptions (Continued)
PDF: 09005aef828742dd
htf9c64_128x72rh.pdf - Rev. D 3/10 EN
10:9
Bit
6
7
8
Description
Alarm window lock bit
0: Alarm trips are not locked and can be changed
1: Alarm trips are locked and cannot be changed
Critical trip lock bit
0: Critical trip is not locked and can be changed
1: Critical trip is locked and cannot be changed
Shutdown mode
0: Enabled
1: Shutdown
Hysteresis enable
00: Disable
01: Enable at 1.5°C
10: Enable at 3°C
11: Enable at 6°C
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SORDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
20
Notes
The shutdown mode is a power-saving mode that dis-
ables the temperature sensor.
When enabled, a hysteresis is applied to temperature
movement around the trip points (see Figure 4
(page 21)). As an example, if the hysteresis register
is enabled to a delta of 6°C, the preset trip points will
toggle when the temperature reaches the program-
med value. These values will reset when the tempera-
ture drops below the trip points minus the set
hysteresis level. In this case, this would be critical tem-
perature minus 6°C.
The hysteresis is applied to both the above alarm win-
dow and the below alarm window bits found in the
read-only temperature register (see Table 23
(page 21)). EVENT# is also affected by this register.
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