EVALSTSR30-60W STMicroelectronics, EVALSTSR30-60W Datasheet - Page 5

• Manufacturer Part Number: EVALSTSR30-60W
• Description: BOARD EVAL USING L6668 & STSR30
• Manufacturer: STMicroelectronics
• Type: AC/DC Switching Convertersr

Specifications of EVALSTSR30-60W

• Mfg Application Notes: EVALSTSR30-60W AppNote
• Main Purpose: AC/DC, Primary and Secondary Side
• Outputs And Type: 1, Isolated
• Power - Output: 60W
• Voltage - Output: 12V
• Current - Output: 5A
• Voltage - Input: 88 ~ 264VAC
• Regulator Topology: Flyback
• Frequency - Switching: 68kHz
• Board Type: Fully Populated
• Utilized Ic / Part: L6668, STSR30
• Input Voltage: 88 V to 264 V
• Output Voltage: 12 V
• Dimensions: 120 mm x 75 mm
• Product: Power Management Modules
• Silicon Manufacturer: ST Micro
• Silicon Core Number: L6668 And STSR30
• Kit Application Type: Power Management - Voltage Regulator
• Application Sub Type: SMPS
• Kit Contents: Board
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: L6668, STSR30
• Other names: 497-6389; EVALSTSR30-60W

Table 5. Electrical Characteristcs (continued)
(T
REFERENCE VOLTAGE
PWM CONTROL
CURRENT SENSE COMPARATOR
STANDBY FUNCTION
LATCHED DISABLE FUNCTION
OSCILLATOR
SLOPE COMPENSATION
SOFT-START
S-COMP
S-COMP
Symbol
V
V
j
R
V
I
V
t
= 0 to 105°C, Vcc=15V, Co=1nF; R
D
V
V
COMP
COMP
D
I
ISENdis
d(H-L)
I
I
t
Vpk
Vvy
COMP
I
ISEN
ISENx
Vth
fsw
V
SSC
REF
LEB
REF
DIS
REF
max
drop
min
th
H
pk
vy
Output voltage
Total variation
Short circuit current
Sink capability in UVLO
Maximum level
Max. source current
Dynamic resistance
Maximum duty cycle
Minimum duty cycle
Input Bias Current
Leading Edge Blanking
Delay to Output
Gain
Maximum signal
Hiccup-mode OCP level
V
Threshold on V
Hysteresis
Input Bias Current
Disable threshold
Oscillation Frequency
Oscillator peak voltage
Oscillator valley voltage
Ramp peak
Ramp starting value
Ramp voltage
Source capability
Charge current
COMP
- V
STBY
Parameter
COMP
T
=13.3k , C
(2)
Vcc= 9.4 to 22 V,
I
V
Vcc = 6V; Isink = 0.5 mA
I
V
V
V
V
V
After gate drive low-to-high
transition
V
(2)
I
(2)
V
(2)
Tj = 25°C, V
Vcc = 9.4 to 22V, V
(2)
(2)
R
OUT pin high, V
R
OUT pin high
OUT pin low
V
Tj = 25 °C
REF
COMP
STBY
REF
COMP
COMP
COMP
COMP
ISEN
COMP
DIS
S-COMP
S-COMP
S-COMP
Tj = 25 °C; I
Voltage falling
voltage rising
= 1 to 5 mA
= 0 to Vth
= 0
= 0.8 mA, V
= 0
=0
= 1 V
= 2 to 4 V
= 5 V
= 1 V
= 5 V
Test Condition
= 3 kΩ to GND,
= 3 kΩ to GND,
= V
T
=1nF; unless otherwise specified)
COMP
S-COMPpk
REF
COMP
COMP
= 5 V
= 1 mA
COMP
= 5V
<3V
= 5 V
4.925
0.725
Min.
3.56
1.35
2.85
0.15
320
160
4.8
5.5
2.1
0.8
1.6
0.8
10
70
14
50
95
93
Typ.
3.75
0.95
1.75
0.35
400
225
100
100
0.2
0.8
1.5
2.2
22
35
20
5
3
3
0
5.075
0.875
Max.
5.13
3.94
1.65
3.15
0.55
480
290
100
105
107
0.5
2.3
1.1
1.9
30
75
26
-1
-1
0
L6668
Unit
kHz
kHz
mA
V/V
mV
mV
mA
kΩ
µA
µA
µA
µA
ns
ns
%
%
V
V
V
V
V
V
V
V
V
V
V
V
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