YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 20

• Manufacturer Part Number: YR0K42378FC000BA
• Description: KIT EVAL FOR H8S/2378
• Manufacturer: Renesas Electronics America
• Series: H8®r
• Type: MCUr

Specifications of YR0K42378FC000BA

• Contents: Board
• For Use With/related Products: H8S/2378
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Item
26.1.2 DC
Characteristics
Table 26.2 DC
Characteristics (1)
Table 26.4
Permissible Output
Currents
26.1.6 Flash Memory
Characteristics
Table 26.13 Flash
Memory Characteristics
(0.35-μm F-ZTAT
Version)
Rev.7.00 Mar. 18, 2009 page xviii of lxvi
REJ09B0109-0700
Page
1020
1022
1033
1034
Revision (See Manual for Details)
Table amended
Notes 4 added
4. When used as SCL0 to SCL1, SDA0 to SDA1.
Table amended
Item
Permissible output low
current (per pin)
Table amended
Item
Programming time *
Erase time *
Rewrites
Data retention time
Notes 7 to 9 added
7. The minimum number of rewrites after which all
8. Reference value for 25°C. (Rewrites usually function up to
9. The data retention characteristics within the specification
Item
Input high
voltage
Input low
voltage
Output high All output pins
voltage
Output low
voltage
characteristics are guaranteed. (Characteristics are
guaranteed over a range of one rewrite to the minimum
number of rewrites.)
this standard value.)
range, including the minimum number of rewrites.
1
*
3
NMI, EXTAL
STBY,
MD2 to MD0
RES, NMI, EMLE
EXTAL
Port 3,
P50 to P53 *
ports 6 *
ports A to H *
Port 4, Port 9
RES, STBY,
MD2 to MD0,
EMLE
Ports 3 to 6 *
Port 8 *
ports A to H *
port 9
All output pins
P32 to P35 *
*
6
1
*
2
*
3
4
3
,
and 8 *
3
4
3
,
3
3
SCL0, 1, SDA0, 1
Output pins other
than the above
,
,
3
,
Symbol
V
V
V
V
IH
IL
OH
OL
Min.
V
V
V
2.2
2.2
–0.3
–0.3
–0.3
V
V
—
—
CC
CC
CC
CC
CC
Symbol
t
t
N
t
P
E
DRP
WEC
Symbol
I
× 0.9
× 0.9
× 0.7
–0.5
–1.0
OL
Min.
—
—
100 *
10 *
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
9
Min.
7
—
—
Typ.
10
50
10000 *
—
V
V
V
V
AV
V
V
Max.
V
—
—
0.4
0.5
CC
CC
CC
CC
CC
CC
CC
CC
8
+ 0.3
+ 0.3
+0.3
+0.3
× 0.1
× 0.2
× 0.2
Typ.
—
—
Max. Unit
200
1000
—
—
+0.3 V
ms/
128 bytes
ms/blocks
Times
Years
Unit
V
V
V
V
V
V
V
V
V
V
V
Max.
8.0
2.0
Test
Conditions
I
I
I
I
OH
OH
OL
OL
Test
Conditions
= 1.6 mA
= 8.0 mA
= –200 μA
= –1 mA
Unit
mA