YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 227
YR0K42378FC000BA
Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of YR0K42378FC000BA
Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 227 of 1208
- Download datasheet (8Mb)
Bit
6
5
Bit Name
RCDM
DDS
Initial Value
0
0
R/W
R/W
R/W
Description
RAS Down Mode
When access to DRAM space is interrupted by an
access to normal space, an access to an internal
I/O register, etc., this bit selects whether the RAS
signal is held low while waiting for the next DRAM
access (RAS down mode), or is driven high again
(RAS up mode). The setting of this bit is valid only
when the BE bit is set to 1.
If this bit is cleared to 0 when set to 1 in the RAS
down state, the RAS down state is cleared at that
point, and RAS goes high.
When continuous synchronous DRAM space is set,
reading from and writing to this bit is enabled.
However, the setting does not affect the operation.
0: RAS up mode selected for DRAM space access
1: RAS down mode selected for DRAM space
DMAC Single Address Transfer Option
Selects whether full access is always performed or
burst access is enabled when DMAC single
address transfer is performed on the
DRAM/synchronous DRAM.
When the BE bit is cleared to 0 in DRAMCR,
disabling DRAM/synchronous DRAM burst access,
DMAC single address transfer is performed in full
access mode regardless of the setting of this bit.
This bit has no effect on other bus master external
accesses or DMAC dual address transfers.
0: Full access is always executed
1: Burst access is enabled
access
Rev.7.00 Mar. 18, 2009 page 159 of 1136
Section 6 Bus Controller (BSC)
REJ09B0109-0700
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