YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 979

Manufacturer Part Number

YR0K42378FC000BA

KIT EVAL FOR H8S/2378

Manufacturer

Renesas Electronics America

For Use With/related Products

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

8. When the data storable area indicated by programming parameter FMPDR is within the flash

In consideration of these conditions, there are three factors; operating mode, the bank structure of

the user MAT, and operations.

The areas in which the programming data can be stored for execution are shown in tables.

Table 21.7 Executable MAT

Note : * Programming/Erasing is possible to user MATs.

Boot MAT. Please make sure you know which MAT is selected when switching between

memory area, an error will occur even when the data stored is normal. Therefore, the data

should be transferred to the on-chip RAM to place the address that FMPDR indicates in an

area other than the flash memory.

Table 21.8 (2)

User Program Mode

Table 21.8 (1)

Section 21 Flash Memory (0.18-μm F-ZTAT Version)

Rev.7.00 Mar. 18, 2009 page 911 of 1136

Initiated Mode

User Boot Mode *

Table 21.8 (3)

Table 21.8 (4)

REJ09B0109-0700