YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 305

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YR0K42378FC000BA

Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet

Specifications of YR0K42378FC000BA

Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Section 6 Bus Controller (BSC)
T
T
T
T
T
Rp
Rr
Rr1
Rcw
Rc2
φ
SDRAMφ
Address bus
Precharge-sel
RAS
CAS
WE
CKE
High
NOP
PALL
REF
Figure 6.56 Auto Refresh Timing
(TPC = 0, TPC0 = 0, RLW1 = 0, RLW0 = 1)
Self-Refreshing: A self-refresh mode (battery backup mode) is provided for synchronous DRAM
as a kind of standby mode. In this mode, refresh timing and refresh addresses are generated within
the synchronous DRAM.
To select self-refreshing, set the RFSHE bit to 1 in REFCR. When a SLEEP instruction is
executed to enter software standby mode, the SELF command is issued, as shown in figure 6.57.
When software standby mode is exited, the SLFRF bit in REFCR is cleared to 0 and self-refresh
mode is exited automatically. If an auto refresh request occurs when making a transition to
software standby mode, auto refreshing is executed, then self-refresh mode is entered.
When using self-refresh mode, the OPE bit must not be cleared to 0 in SBYCR.
Rev.7.00 Mar. 18, 2009 page 237 of 1136
REJ09B0109-0700

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