FQD3P50 Fairchild Semiconductor, FQD3P50 Datasheet

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FQD3P50

Manufacturer Part Number
FQD3P50
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Internati
FQD3P50 / FQU3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -2.1A, -500V, R
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQU Series
I-PAK
FQD3P50 / FQU3P50
Typ
--
--
--
DS(on)
-55 to +150
= 4.9
-1.33
-500
-2.1
-8.4
250
-2.1
-4.5
300
5.0
2.5
0.4
50
30
G
@V
! ! ! !
! ! ! !
Max
110
2.5
50
January 2009
GS
QFET
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
D
S
! ! ! !
! ! ! !
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A2, January 2009
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD3P50 Summary of contents

Page 1

... D FQD3P50 / FQU3P50 Units -500 V -2.1 A -1. 250 mJ -2.1 A 5.0 mJ -4.5 V/ns 2 ...

Page 2

... ≤ -2.7A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 1200 1000 800 600 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor International 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ ...

Page 4

... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2009 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT ...

Page 7

... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. A2, January 2009 ...

Page 8

... Mechanical Dimensions ©2009 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A2, January 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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