PIC18F1320-I/SO Microchip Technology, PIC18F1320-I/SO Datasheet - Page 256

• Manufacturer Part Number: PIC18F1320-I/SO
• Description: IC MCU FLASH 4KX16 A/D 18SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F1320-I/SO

• Program Memory Type: FLASH
• Program Memory Size: 8KB (4K x 16)
• Package / Case: 18-SOIC (7.5mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 16
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: EUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 4
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM163014, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 7-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DVA12XP080 - ADAPTER DEVICE FOR MPLAB-ICEAC164010 - MODULE SKT PROMATEII DIP/SOIC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC18F1220/1320
TABLE 22-1:
DS39605C-page 254
DC CHARACTERISTICS
D110
D112
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
I
E
V
T
T
T
E
V
V
T
T
PP
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
The pin may be kept in this range at times other than programming, but it is not recommended.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Current into MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP™ Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
PP
PP
(3)
pin
pin
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
10M
1M
—
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
5
-40°C
Units
Year Provided no other
Year Provided no other
E/W -40 C to +85 C
E/W -40°C to +85°C
E/W -40 C to +85 C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
T
A
 2004 Microchip Technology Inc.
(Note 2)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
+85°C for industrial
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions