R5F212B7SNFP#U0 Renesas Electronics America, R5F212B7SNFP#U0 Datasheet - Page 593

• Manufacturer Part Number: R5F212B7SNFP#U0
• Description: IC R8C/2B MCU FLASH 64-LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/2x/2Br

Specifications of R5F212B7SNFP#U0

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: POR, PWM, Voltage Detect, WDT
• Number Of I /o: 55
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• Ram Size: 2.5K x 8
• Voltage - Supply (vcc/vdd): 2.2 V ~ 5.5 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 64-LQFP
• For Use With: R0K5212D8S001BE - KIT STARTER FOR R8C/2DR0K5212D8S000BE - KIT DEV FOR R8C/2D
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/2A Group, R8C/2B Group
Rev.2.00
REJ09B0324-0200
22.8.1.4
22.8.1.5
22.8.1.6
22.8.1.7
22.8.1.8
Write 0 before writing 1 when setting the FMR01, FMR02, or FMR11 bit to 1. Do not generate an interrupt
between writing 0 and 1.
In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is
stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be
rewritten correctly. In this case, use standard serial I/O mode.
Do not write additions to the already programmed address.
Do not enter stop mode or wait mode during erase-suspend.
To perform programming and erasure, use VCC = 2.7 V to 5.5 V as the supply voltage. Do not perform
programming and erasure at less than 2.7 V.
Nov 26, 2007
How to Access
Program and Erase Voltage for Flash Memory
Rewriting User ROM Area
Program
Entering Stop Mode or Wait Mode
Page 571 of 580
22. Usage Notes