IC R8C/2B MCU FLASH 96+2K 64LQFP

R5F212BASNFA#U0

Manufacturer Part NumberR5F212BASNFA#U0
DescriptionIC R8C/2B MCU FLASH 96+2K 64LQFP
ManufacturerRenesas Electronics America
SeriesR8C/2x/2B
R5F212BASNFA#U0 datasheet
 


Specifications of R5F212BASNFA#U0

Core ProcessorR8CCore Size16/32-Bit
Speed20MHzConnectivityI²C, LIN, SIO, SSU, UART/USART
PeripheralsPOR, PWM, Voltage Detect, WDTNumber Of I /o55
Program Memory Size96KB (96K x 8)Program Memory TypeFLASH
Ram Size7K x 8Voltage - Supply (vcc/vdd)2.2 V ~ 5.5 V
Data ConvertersA/D 12x10b; D/A 2x8bOscillator TypeInternal
Operating Temperature-20°C ~ 85°CPackage / Case64-LQFP
For Use WithR0K5212D8S001BE - KIT STARTER FOR R8C/2DR0K5212D8S000BE - KIT DEV FOR R8C/2DLead Free Status / RoHS StatusLead free / RoHS Compliant
Eeprom Size-  
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R8C/2A Group, R8C/2B Group
Table 5.5
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Program/erase endurance
Byte program time
Block erase time
t
Time delay from suspend request until
d(SR-SUS)
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
(7)
Data hold time
NOTES:
1. V
= 2.7 to 5.5 V at T
= 0 to 60°C, unless otherwise specified.
CC
opr
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Rev.2.10
Nov 26, 2007
Page 37 of 60
REJ03B0182-0210
Conditions
(2)
R8C/2A Group
R8C/2B Group
Ambient temperature = 55°C
5. Electrical Characteristics
Standard
Unit
Min.
Typ.
Max.
(3)
times
100
(3)
times
1,000
µs
50
400
0.4
9
s
µs
97+CPU clock
× 6 cycles
µs
650
0
ns
µs
3+CPU clock
× 4 cycles
2.7
5.5
V
2.2
5.5
V
°C
0
60
20
year