MC9S12C64CFUE Freescale Semiconductor, MC9S12C64CFUE Datasheet - Page 503

• Manufacturer Part Number: MC9S12C64CFUE
• Description: IC MCU 64K FLASH 4K RAM 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12C64CFUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 60
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-QFP
• Processor Series: S12C
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4 KB
• Interface Type: CAN/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 60
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68EVB912C32EE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Package: 80PQFP
• Family Name: HCS12
• Maximum Speed: 25 MHz
• Operating Supply Voltage: 2.5|5 V
• Height: 2.4 mm
• Length: 14 mm
• Supply Voltage (max): 2.75 V, 5.5 V
• Supply Voltage (min): 2.35 V, 2.97 V
• Width: 14 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 18
32 Kbyte Flash Module (S12FTS32KV1)
18.1
The
array of
The Flash array may be read as either bytes, aligned words, or misaligned words. Read access time is one
bus cycle for byte and aligned word, and two bus cycles for misaligned words.
The Flash array is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both mass erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase is generated internally. It is not possible to read from a Flash array while it is being erased or
programmed.
18.1.1
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the Flash array memory.
18.1.2
Freescale Semiconductor
•
•
•
•
•
•
•
•
FTS32K
32
Automated program and erase algorithm
Interrupts on Flash command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline for faster multi-word program times
Flexible protection scheme to prevent accidental program or erase
Single power supply for Flash program and erase operations
Security feature to prevent unauthorized access to the Flash array memory
32
Introduction
Kbytes of Flash memory comprised of one
Kbytes organized as
Glossary
Features
module implements a
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
512
32
MC9S12C-Family / MC9S12GC-Family
rows of
Kbyte Flash (nonvolatile) memory. The Flash memory contains one
64
CAUTION
bytes with an erase sector size of eight rows
Rev 01.24
32
Kbyte array divided into
64
sectors of
(512
512
bytes).
bytes
503