R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 1109

• Manufacturer Part Number: R4F24268NVFQV
• Description: MCU 256K FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
The flash memory in this LSI can be accessed in three programming modes: user programming
mode, boot mode, and programmer mode.
Table 21.1 gives an overview of the flash memory specifications (refer to section 1, Overview, for
items that are not shown in table 21.1).
Table 21.1 Overview of Flash Memory Specifications
Notes: 1. The programming and erase count determine the number of times the erase operation
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Item
Flash memory programming modes
Erase block division
Programming method
Erase method
Programming and erase control method
Commands
Programming and erase count
Data retention
2. 10,000 times for the data flash and 1,000 times for other blocks.
can be performed in each block.
For example, if 1-word programming is done 2,048 times, each at a different address in
a 4-Kbyte block and then the block is erased, this is counted as one erase count. If the
allowed programming and erase count are 1,000 times, each block can be erased
1,000 times.
Section 21 Flash Memory
User ROM
Data flash
Description
Three modes (user programming mode, boot mode,
and programmer mode)
See figure 21.1.
Word units
Block units
Programming and erasure are controlled by
software commands
Six commands
1,000 times/10,000 times*
Ten years
1
*
2
Section 21 Flash Memory
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