R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 255

MCU 256K FLASH 48K 144-LQFP

R4F24268NVFQV

Manufacturer Part Number
R4F24268NVFQV
Description
MCU 256K FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24268NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
H8S/2426, H8S/2426R, H8S/2424 Group
6.7.5
Figure 6.33 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and the T
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Read
Write
Note: n = 2 to 5
Basic Timing
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
Figure 6.33 DRAM Basic Access Timing (RAST = 0, CAST = 0)
c1
and two T
T
p
Row address
c2
(column address output cycle) states.
High
High
p
(precharge cycle) state, one T
T
r
T
c1
Column address
Section 6 Bus Controller (BSC)
T
c2
r
(row address
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