MC9S12DT256MPVE Freescale Semiconductor, MC9S12DT256MPVE Datasheet - Page 1105

• Manufacturer Part Number: MC9S12DT256MPVE
• Description: IC MCU 256K FLASH 25MHZ 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12DT256MPVE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, I²C, SCI, SPI
• Peripherals: PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.25 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: S12D
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: CAN/I2C/SCI/SPI
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 1
• Operating Supply Voltage: 5 V to 2.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68KIT912DP256
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (8-ch x 10-bit)
• No. Of I/o's: 91
• Eeprom Memory Size: 4KB
• Ram Memory Size: 12KB
• Cpu Speed: 25MHz
• No. Of Timers: 1
• No. Of Pwm Channels: 8
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 27
512 Kbyte Flash Module (S12XFTX512K4V2)
27.1
This document describes the FTX512K4 module that includes a 512K Kbyte Flash (nonvolatile) memory.
The Flash memory may be read as either bytes, aligned words or misaligned words. Read access time is
one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.
The Flash memory is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both block erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase the Flash memory is generated internally. It is not possible to read from a Flash block while it is
being erased or programmed.
27.1.1
Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms
(including program and erase) on the Flash memory.
Multiple-Input Signature Register (MISR) — A Multiple-Input Signature Register is an output
response analyzer implemented using a linear feedback shift-register (LFSR). A 16-bit MISR is used to
compress data and generate a signature that is particular to the data read from a Flash block.
27.1.2
Freescale Semiconductor
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512 Kbytes of Flash memory comprised of four 128 Kbyte blocks with each block divided into
128 sectors of 1024 bytes
Automated program and erase algorithm
Interrupts on Flash command completion, command buffer empty
Fast sector erase and word program operation
2-stage command pipeline for faster multi-word program times
Sector erase abort feature for critical interrupt response
Flexible protection scheme to prevent accidental program or erase
Single power supply for all Flash operations including program and erase
Introduction
Glossary
Features
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
MC9S12XDP512 Data Sheet, Rev. 2.21
CAUTION
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