SAK-TC1197-512F180E AC Infineon Technologies, SAK-TC1197-512F180E AC Datasheet - Page 33

• Manufacturer Part Number: SAK-TC1197-512F180E AC
• Description: IC MCU 32BIT 4MB FLASH BGA416-10
• Manufacturer: Infineon Technologies
• Series: TC11xxr

Specifications of SAK-TC1197-512F180E AC

• Core Processor: TriCore
• Core Size: 32-Bit
• Speed: 180MHz
• Connectivity: ASC, CAN, EBI/EMI, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number Of I /o: 219
• Program Memory Size: 4MB (4M x 8)
• Program Memory Type: FLASH
• Ram Size: 224K x 8
• Voltage - Supply (vcc/vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 416-BGA
• Packages: PG-BGA-416
• Max Clock Frequency: 180.0 MHz
• Sram (incl. Cache): 224.0 KByte
• Can Nodes: 4
• A / D Input Lines (incl. Fadc): 48
• Program Memory: 4.0 MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

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Data Flash Features and Functions
Note: Only available in PMU0.
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Data Sheet
Overlay support with SRAM for calibration applications.
Configurable wait state selection for different CPU frequencies.
Endurance = 1000; minimum 1000 program/erase cycles per physical sector;
reduced endurance of 100 per 16 KB sector.
Operating lifetime (incl. Retention): 20 years with endurance=1000.
For further operating conditions see data sheet section “Flash Memory Parameters”.
64 Kbyte on-chip Flash, configured in two independent Flash banks of equal size.
64 bit read interface.
Erase/program one bank while data read access from the other bank.
Programming one bank while erasing the other bank using an automatic
suspend/resume function.
Dynamic correction of single-bit errors during read access.
Sector architecture:
– Two sectors of equal size.
– Each sector separately erasable.
128 byte pages to be written in one step.
Operational control per command sequences (unlock sequences, same as those of
Program Flash) for protection against unintended operation.
End-of-busy as well as error reporting with interrupt and bus error trap.
Write state machine for automatic program and erase.
Margin check for detection of problematic Flash bits.
Endurance = 30000 (can be device dependent); i.e. 30000 program/erase cycles per
sector are allowed, with a retention of min. 5 years.
Dedicated DFlash status information.
Other characteristics: Same as Program Flash.
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Introduction
V1.1, 2009-05
TC1197