SUD50P04-13L-GE3 Vishay, SUD50P04-13L-GE3 Datasheet

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SUD50P04-13L-GE3

Manufacturer Part Number
SUD50P04-13L-GE3
Description
MOSFET P-CH D-S 40V DPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD50P04-13L-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
55.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
78W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-60A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
10.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-3V
Power Dissipation Pd
3W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD50P04-13L-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50P04-13L-GE3
Manufacturer:
TI
Quantity:
100
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy,
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
- 40
DS
(V)
Ordering Information:
G
Top View
TO-252
0.022 at V
0.013 at V
D
b
r
b
DS(on)
P-Channel 40-V (D-S) 175 °C MOSFET
S
a
SUD50P04-13L-E3 (Lead (Pb)-free)
GS
GS
(Ω)
= - 4.5 V
= - 10 V
Drain Connected to Tab
A
I
- 60
= 25 °C, unless otherwise noted
D
- 48
(A)
New Product
a
Steady State
T
T
L = 0.1 mH
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
P-Channel MOSFET
Symbol
Symbol
T
G
R
R
J
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
®
stg
Power MOSFET
S
D
Typical
1.3
15
40
- 55 to 175
Limit
93.7
- 100
- 60
- 60
SUD50P04-13L
± 20
- 40
- 43
- 40
80
3
a
c
c
b
Maximum
Vishay Siliconix
1.8
18
50
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
1

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SUD50P04-13L-GE3 Summary of contents

Page 1

... DS(on) 0.013 0.022 4 TO-252 Drain Connected to Tab Top View SUD50P04-13L-E3 (Lead (Pb)-free) Ordering Information: ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy, b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUD50P04-13L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...

Page 3

... C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 73009 S-71660-Rev. B, 06-Aug-07 New Product ° ° SUD50P04-13L Vishay Siliconix 100 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 0.05 0. 0.02 ...

Page 4

... SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Limited By Package 100 T - Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 Document Number: 73009 S-71660-Rev. B, 06-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50P04-13L Vishay Siliconix www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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