SUD50P04-09L-E3 Vishay, SUD50P04-09L-E3 Datasheet
SUD50P04-09L-E3
Specifications of SUD50P04-09L-E3
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SUD50P04-09L-E3 Summary of contents
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... 0.0145 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50P04-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUD50P04-09L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Capacitance Document Number: 72243 S10-0546-Rev. C, 08-Mar- 0.020 ° °C 0.016 125 °C 0.012 0.008 0.004 0.000 60 80 100 C iss SUD50P04-09L Vishay Siliconix 100 125 ° °C 25 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...