SUD50P04-09L-E3 Vishay, SUD50P04-09L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50P04-09L-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,50A I(D),TO-252
• Manufacturer: Vishay

Specifications of SUD50P04-09L-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72243
S10-0546-Rev. C, 08-Mar-10
8000
7000
6000
5000
4000
3000
2000
1000
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
C
5
rss
20
1
V
V
V
DS
V
GS
10
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
= 10 V thru 5 V
15
Capacitance
40
2
C
20
oss
60
3
C
25
iss
T
30
C
= - 55 °C
80
4
4 V
25 °C
125 °C
35
3 V
2 V
100
5
40
0.020
0.016
0.012
0.008
0.004
0.000
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
0.5
V
I
D
DS
= 50 A
20
20
On-Resistance vs. Drain Current
= 20 V
1.0
V
GS
Transfer Characteristics
Q
- Gate-to-Source Voltage (V)
I
1.5
g
D
40
- Total Gate Charge (nC)
- Drain Current (A)
40
Gate Charge
T
2.0
25 °C
SUD50P04-09L
C
V
GS
= 125 °C
60
Vishay Siliconix
2.5
= 4.5 V
60
V
GS
3.0
80
= 10 V
- 55 °C
www.vishay.com
3.5
80
100
4.0
100
4.5
120
3