SUD50P04-08-GE3 Vishay, SUD50P04-08-GE3 Datasheet

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SUD50P04-08-GE3

Manufacturer Part Number
SUD50P04-08-GE3
Description
P-CHANNEL 40-V (D-S), MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD50P04-08-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.1 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
159nC @ 10V
Input Capacitance (ciss) @ Vds
5380pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
P Channel
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
6.7mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-252
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0067 Ohms
Forward Transconductance Gfs (max / Min)
45 S
Continuous Drain Current
- 50 A
Power Dissipation
73.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SUD50P04-08-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50P04-08-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SUD50P04-08-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUD50P04-08-GE3
0
Company:
Part Number:
SUD50P04-08-GE3
Quantity:
2 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
- 40
(V)
G
Top View
TO-252
0.0081 at V
0.0117 at V
D
S
R
DS(on)
a
GS
GS
J
a
(Ω)
Drain Connected to Tab
= 150 °C)
= - 4.5 V
= - 10 V
c
P-Channel 40-V (D-S) MOSFET
I
- 50
- 48
D
(A)
d
d
C
Q
= 25 °C, unless otherwise noted
g
(Typ.)
60
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
Definition
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
S
D
Limit
- 100
73.5
- 50
- 50
Limit
± 20
- 40
- 46
106
2.5
1.7
50
SUD50P04-08
d
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SUD50P04-08-GE3

SUD50P04-08-GE3 Summary of contents

Page 1

... DS(on) 0.0081 0.0117 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUD50P04-08 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 0.015 0.012 0.009 0.006 0.003 1.5 2.0 2.5 0.030 0.024 0.018 0.012 0.006 °C C 0.000 125 ° SUD50P04-08 Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current T = 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 4

... SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 8000 6000 C iss 4000 2000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65594. Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 1000 100 10 1 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50P04-08 Vishay Siliconix Limited DS(on) 100 µ ms, 100 °C C Single Pulse BVDSS Limited Drain-to-Source Voltage ( > ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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