SUD50P04-08-GE3 Vishay, SUD50P04-08-GE3 Datasheet - Page 3

• Manufacturer Part Number: SUD50P04-08-GE3
• Description: P-CHANNEL 40-V (D-S), MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-08-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 159nC @ 10V
• Input Capacitance (ciss) @ Vds: 5380pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0067 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Continuous Drain Current: - 50 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50P04-08-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
100
100
80
60
40
20
10
75
50
25
0
8
6
4
2
0
0
0.0
0
0
T
C
= 25 °C
0.5
10
V
V
Transfer Characteristics
DS
GS
1
Output Characteristics
T
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
Transconductance
I
T
= - 55 °C
D
C
1.0
- Drain Current (A)
20
= 125 °C
V
GS
T
C
= 10 V thru 5 V
= 25 °C
2
1.5
30
T
V
V
C
GS
GS
T
3
= 125 °C
C
2.0
= 4 V
40
= 3 V
= - 55 °C
2.5
50
4
0.015
0.012
0.009
0.006
0.003
0.030
0.024
0.018
0.012
0.006
0.000
10
8
6
4
2
0
0
0
2
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
On-Resistance vs. Drain Current
20
V
30
V
GS
4
Q
DS
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
V
V
= 10 V
I
D
GS
GS
V
- Drain Current (A)
Gate Charge
40
DS
= 4.5 V
= 10 V
= 20 V
60
6
SUD50P04-08
Vishay Siliconix
60
V
T
DS
T
J
J
90
= 150 °C
= 32 V
= 25 °C
8
www.vishay.com
80
100
120
10
3