SUD50P04-08-GE3 Vishay, SUD50P04-08-GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-08-GE3
• Description: P-CHANNEL 40-V (D-S), MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-08-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 159nC @ 10V
• Input Capacitance (ciss) @ Vds: 5380pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 6.7mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0067 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Continuous Drain Current: - 50 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD50P04-08-GE3TR

SUD50P04-08
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
8000
6000
4000
2000
100
0.1
10
2.0
1.7
1.4
1.1
0.8
0.5
1
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
Source-Drain Diode Forward Voltage
D
C
= 20 A
oss
V
V
0.3
T
SD
10
DS
T
J
0
J
= 150 °C
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
C
iss
0.6
20
50
V
GS
75
T
= 10 V
J
= 25 °C
0.9
100
30
V
GS
= 4.5 V
125
1.2
150
40
- 1.0
- 1.3
- 1.6
- 1.9
- 2.2
- 2.5
- 43
- 45
- 47
- 49
- 51
80
60
40
20
Drain Source Breakdown vs. Junction Temperature
0
- 50
- 50
0
- 25
- 25
Package Limited
I
D
25
= 250 µA
0
T
0
T
J
C
- Junction Temperature (°C)
Threshold Voltage
T
50
- Case Temperature (°C)
Current Derating
J
25
25
- Temperature (°C)
75
50
50
S10-0034-Rev. A, 11-Jan-10
I
D
Document Number: 65594
= 250 µA
75
75
100
100
100
125
125
125
150
150
150