SUD50P04-13L Vishay, SUD50P04-13L Datasheet

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SUD50P04-13L

Manufacturer Part Number
SUD50P04-13L
Description
P-channel 40-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SUD50P04-13L-E3
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VISHAY
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8 000
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Part Number:
SUD50P04-13L-E3
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100
Part Number:
SUD50P04-13L-GE3
Manufacturer:
TI
Quantity:
100
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy,
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
- 40
DS
(V)
Ordering Information:
G
Top View
TO-252
0.022 at V
0.013 at V
D
b
r
b
DS(on)
P-Channel 40-V (D-S) 175 °C MOSFET
S
a
SUD50P04-13L-E3 (Lead (Pb)-free)
GS
GS
(Ω)
= - 4.5 V
= - 10 V
Drain Connected to Tab
A
I
- 60
= 25 °C, unless otherwise noted
D
- 48
(A)
New Product
a
Steady State
T
T
L = 0.1 mH
T
T
t ≤ 10 sec
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
P-Channel MOSFET
Symbol
Symbol
T
G
R
R
J
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
®
stg
Power MOSFET
S
D
Typical
1.3
15
40
- 55 to 175
Limit
93.7
- 100
- 60
- 60
SUD50P04-13L
± 20
- 40
- 43
- 40
80
3
a
c
c
b
Maximum
Vishay Siliconix
1.8
18
50
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
1

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SUD50P04-13L Summary of contents

Page 1

... 0.022 4 TO-252 Drain Connected to Tab Top View SUD50P04-13L-E3 (Lead (Pb)-free) Ordering Information: ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy, ...

Page 2

... SUD50P04-13L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 73009 S-71660-Rev. B, 06-Aug-07 New Product ° ° SUD50P04-13L Vishay Siliconix 100 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Limited By Package 100 T - Case Temperature (°C) C Maximum Avalanche Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 Document Number: 73009 S-71660-Rev. B, 06-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50P04-13L Vishay Siliconix www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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