STP80NF70 STMicroelectronics, STP80NF70 Datasheet - Page 3

• Manufacturer Part Number: STP80NF70
• Description: MOSFET N-CH 68V 98A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF70

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 68V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10964-5

STP80NF70
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
2. I
3.
Table 3.
1. 1.6 mm from case for 10 sec.
Symbol
dv/dt
E
I
P
DM
V
V
Symbol
R
AS
T
R
T
I
I
TOT
SD
Starting T
DS
GS
stg
D
D
thj-case
thj-amb
J
(1)
(3)
T
(2)
≤ 80 A, di/dt ≤ 300 A/µs, V
l
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
J
Absolute maximum ratings
Thermal data
= 25
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
o
C, I
D
(1)
= 40 A, V
Parameter
DD
C
Parameter
DD
≤ V
= 25 °C
Doc ID 17610 Rev 1
GS
= 34 V.
(BR)DSS
= 0)
C
C
, T
=100 °C
= 25 °C
J
≤ T
JMAX.
-55 to 175
Value
Value
0.79
62.5
± 20
1.27
392
190
700
300
68
98
68
13
Electrical ratings
°C/W
°C/W
W/°C
Unit
V/ns
Unit
mJ
°C
°C
W
V
V
A
A
A
3/13