IDT04S60C Infineon Technologies, IDT04S60C Datasheet - Page 2

• Manufacturer Part Number: IDT04S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT04S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT04S60CXK

Rev. 2.0
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
t
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
, which is dependent on T
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
T
V
V
I
Q
t
C
R
c
sold
DC
F
thJC
thJA
c
j
, I
leaded
1.6mm (0.063 in.) from
case for 10s
I
I
I
V
V
V
di
T
V
V
V
R
F
F
LOAD
page 2
j
=4 A, T
=4 A, T
R
R
R
R
R
R
=0.05 mA
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f = MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
, di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
F,max
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
130
1.7
0.5
20
20
2
2
8
-
-
-
-
-
max.
j
260
500
<10
, I
3.6
1.9
2.4
IDT04S60C
62
50
-
-
-
-
-
LOAD
rr
due to
and
Unit
K/W
°C
V
µA
nC
ns
pF
2006-03-08