IDT04S60C Infineon Technologies, IDT04S60C Datasheet - Page 3

• Manufacturer Part Number: IDT04S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT04S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT04S60CXK

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
45
40
35
30
25
20
15
10
F
5
0
8
7
6
5
4
3
2
1
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
1
75
100
T
C
-55ºC
175ºC
V
[°C]
2
F[V]
125
25ºC
100ºC
150
3
150ºC
175
200
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
10
40
30
20
10
C
F
9
8
7
6
5
4
3
2
1
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
100ºC
75
; V
F(max)
-55ºC
25ºC
4
100
T
C
V
[°C]
F[V]
125
150ºC
j
6
175ºC
150
IDT04S60C
8
175
2006-03-08
200
10