IDT04S60C Infineon Technologies, IDT04S60C Datasheet - Page 5

• Manufacturer Part Number: IDT04S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT04S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT04S60CXK

Rev. 2.0
9 Typ. C stored energy
E
C
=f(V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R
)
0
100
200
V
300
R
[V]
400
500
600
page 5
10 Typ. capacitance charge vs. current slope
Q
C
=f(di
10
8
6
4
2
0
100
F
/dt )
4)
; T
j
=150 °C; I
400
di
F
/dt [A/µs]
F
≤I
F,max
700
IDT04S60C
2006-03-08
1000