IDT04S60C Infineon Technologies, IDT04S60C Datasheet - Page 4

• Manufacturer Part Number: IDT04S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT04S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 8.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT04S60CXK

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
=f(I
10
10
20
18
16
14
12
10
8
6
4
2
0
-1
-2
1
0
10
p
0
F
)
), T
-5
0.02
single pulse
0.05
0.2
0.5
0.1
C
=100 °C, parameter: D =t
p
/T
10
0.1
2
-4
0.2
I
F(AV)
t
10
P
4
[s]
-3
0.5
[A]
10
p
6
/T
-2
1
10
page 4
8
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
200
175
150
125
100
10
10
10
10
10
10
75
50
25
R
R
0
-1
-2
-3
-4
1
0
); T
10
)
100
-1
C
=25 °C, f =1 MHz
j
200
10
0
-55 °C
300
V
25 °C
V
R
10
R
100 °C
[V]
[V]
150 °C
1
175 °C
400
10
IDT04S60C
2
500
2006-03-08
10
600
3