STM32F103ZCT7 STMicroelectronics, STM32F103ZCT7 Datasheet - Page 80

no-image

STM32F103ZCT7

Manufacturer Part Number
STM32F103ZCT7
Description
MCU ARM 32BIT 256KB FLSH 144LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F103ZCT7

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
112
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 21x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
144-LFQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM32F103ZCT7
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
5.3.11
80/123
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 41.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 14611 Rev 7
41. They are based on the EMS levels and classes
DD
and V
STM32F103xC, STM32F103xD, STM32F103xE
SS
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
3.3 V, LQFP144, T
3.3 V, LQFP144, T
72 MHz
72 MHz
Conditions
A
A
+25 °C,
+25 °C,
DD
and
Level/
Class
2B
4A

Related parts for STM32F103ZCT7