PSMN035-100LS NXP Semiconductors, PSMN035-100LS Datasheet

MOSFET,N CH,100V,27A,QFN3333

PSMN035-100LS

Manufacturer Part Number
PSMN035-100LS
Description
MOSFET,N CH,100V,27A,QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN035-100LS

Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
29mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
QFN
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product
is designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN035-100LS
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Rev. 2 — 18 August 2010
High efficiency due to low switching
and conduction losses
Small footprint for compact designs
DC-to-DC converters
Lithium-ion battery protection
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 150 °C
GS
= 10 A;
= 10 A;
Figure 13
Figure 12
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Load switching
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
-
29
Max Unit
100
27
65
150
63
32
V
A
W
°C
mΩ
mΩ

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PSMN035-100LS Summary of contents

Page 1

... PSMN035-100LS N-channel QFN3333 100 V 32mΩ standard level MOSFET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment ...

Page 2

... R Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS Min = Figure 14 °C; - j(init) ≤ 100 V; sup = 50 Ω ...

Page 3

... T pulsed ° j(init) ≤ 100 V; unclamped sup 003a a e 352 120 P der (%) 100 150 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° Ω ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN035-100LS Product data sheet N-channel QFN3333 100 V 32mΩ standard level MOSFET / Conditions see −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS = 10 μ 100 μ 100 (V) DS Min Typ Figure ...

Page 5

... Figure see Figure see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS Min Typ Max Unit 100 - - 2 4 µA - 0.1 2 µ 100 100 ...

Page 6

... Figure /dt = 100 A/µ 003a a e 357 ( (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS Min Typ - 0. 102 003a a e 356 = 25 °C = 150 ° © ...

Page 7

... Fig 8. 003a a e 355 6 5 4.7 V (V) = 4 (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS 100 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values 5 ...

Page 8

... N-channel QFN3333 100 V 32mΩ standard level MOSFET 003aae487 typ max (V) GS Fig 12. Normalized drain-source on-state resistance 003aae358 4 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS 3.2 a 2.4 1.6 0 factor as a function of junction temperature GS(pl) V GS(th ...

Page 9

... Q (nC) G Fig 16. Input, output and reverse transfer capacitances ( 150 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS − function of drain-source voltage; typical values 003a a e 363 = 25 ° 0.9 1.2 V (V) SD 003a a e 362 ...

Page 10

... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN035-100LS v.2 20100818 • Modifications: Status changed from objective to product. PSMN035-100LS v.1 20100517 PSMN035-100LS Product data sheet N-channel QFN3333 100 V 32mΩ standard level MOSFET Data sheet status Change notice Product data sheet ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN035-100LS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN035-100LS ...

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