PSMN3R5-30LL NXP Semiconductors, PSMN3R5-30LL Datasheet - Page 6

• Manufacturer Part Number: PSMN3R5-30LL
• Description: MOSFET,N CH,30V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN3R5-30LL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
100
fs
80
60
40
20
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
20
…continued
30
Conditions
V
R
I
see
I
V
40
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S
S
DS
DS
G(ext)
003aae144
= 10 A; V
= 15 A; dI
I
D
Figure 17
= 15 V; R
= 15 V
(A)
= 4.7 Ω; T
50
Rev. 3 — 18 August 2010
GS
S
/dt = 100 A/µs; V
L
= 0 V; T
= 1 Ω; V
j
= 25 °C
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Fig 6.
j
= 25 °C;
GS
(A)
I
= 4.5 V;
D
50
40
30
20
10
0
GS
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 0 V;
1
PSMN3R5-30LL
T
j
= 150 °C
Min
-
-
-
-
-
-
-
2
Typ
23
54
35
18
0.85
37
34
T
j
= 25 °C
3
© NXP B.V. 2010. All rights reserved.
V
003aae143
GS
-
Max
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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