PSMN3R5-30LL NXP Semiconductors, PSMN3R5-30LL Datasheet - Page 7

• Manufacturer Part Number: PSMN3R5-30LL
• Description: MOSFET,N CH,30V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R5-30LL
Product data sheet
Fig 7.
Fig 9.
(pF)
C
(A)
4000
3000
2000
1000
I
D
50
40
30
20
10
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
10
4.5
0.25
2.5
3.5
0.5
5
0.75
7.5
V
GS
C
C
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003a a e 145
V
iss
rss
003aae142
(V) = 2.4
V
GS
DS
(V)
(V)
2.8
2.6
3
10
Rev. 3 — 18 August 2010
1
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
(mΩ)
R
V
DSon
GS (th)
(V)
25
20
15
10
5
0
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
I
D
0
= 1 mA; V
4
0
DS
PSMN3R5-30LL
= V
8
max
min
typ
GS
60
12
120
© NXP B.V. 2010. All rights reserved.
16
003aae148
003aae453
T
V
j
GS
(°C)
(V)
180
20
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