PSMN3R5-30LL NXP Semiconductors, PSMN3R5-30LL Datasheet - Page 8

• Manufacturer Part Number: PSMN3R5-30LL
• Description: MOSFET,N CH,30V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R5-30LL
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
10
10
10
10
10
10
(A)
I
D
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
0
0
10
min
1
20
typ
2
V
GS
30
V
(V) = 3
All information provided in this document is subject to legal disclaimers.
003a a e 147
GS
003aab271
I
max
10
D
4.5
3.5
(V)
(A)
40
Rev. 3 — 18 August 2010
3
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN3R5-30LL
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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