SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4831BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
a
J
ΔV
Symbol
ΔV
V
r
= 25 °C, unless otherwise noted
I
GS(th)/TJ
DS(on)
t
t
t
t
I
I
C
C
V
GS(th)
D(on)
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
DS/TJ
SM
I
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
a
b
fs
gs
gd
r
f
r
f
g
rr
g
I
V
V
F
I
V
I
V
DS
D
DS
D
= - 2 A, di/dt = 100 A/µs, T
DS
DS
≅ - 5 A, V
≅ - 5 A, V
= - 15 V, V
= - 15 V, V
= - 30 V, V
V
= - 15 V, V
V
V
V
V
V
V
V
V
V
I
DS
DS
DS
DS
S
DS
GS
GS
DS
DD
DD
= - 1.4 A, V
Test Conditions
= V
≥ - 5 V, V
= 0 V, I
= 0 V, V
= - 30 V, V
= - 4.5 V, I
= - 10 V, I
= - 15 V, I
= - 15 V, R
= - 15 V, R
I
GEN
T
GEN
D
f = 1 MHz
GS
C
= 250 µA
GS
GS
GS
= 25 °C
GS
, I
= - 4.5 V, R
= - 10 V, R
D
= - 4.5 V, I
D
= - 10 V, I
GS
= 0 V, T
= 0 V, f = 1 MHz
GS
= - 250 µA
= - 250 µA
GS
D
D
GS
D
= ± 20 V
L
L
= - 10 V
= - 5 A
= - 5 A
= - 3 A
= 3 Ω
= 3 Ω
= 0 V
= 0 V
J
D
G
J
= 75 °C
D
G
= 25 °C
= - 5 A
= - 5 A
= 1 Ω
= 1 Ω
Min
- 30
- 10
- 1
- 0.78
0.034
0.052
Typ
- 30
625
150
115
100
3.6
7.8
1.6
3.5
11
17
35
22
12
24
30
15
14
16
S-71696-Rev. A, 13-Aug-07
7
8
8
7
Document Number: 70483
± 100
0.042
0.065
Max
- 3.3
- 1.2
- 10
- 30
150
- 3
- 1
26
12
14
55
35
20
16
16
40
14
45
25
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V