SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

MOSFETS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70483
S-71696-Rev. A, 13-Aug-07
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.02
0.05
Single Pulse
0.1
0.2
Duty Cycle = 0.5
0.05
Duty Cycle = 0.5
0.1
0.2
0.02
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Si4831BDY
Z
thJA
thJA
t
t
1
2
(t)
= 65 °C/W
www.vishay.com
1
0
0
1
0
0
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