SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70483
S-71696-Rev. A, 13-Aug-07
- 0.3
- 0.1
0.5
0.3
0.1
100
10
- 50
0
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
= 150 °C
0.3
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
T
D
0.9
J
75
= 250 µA
= 25 °C
0.01
100
0.1
10
100
1
0.1
*Limited by r
1.2
I
D
*V
Single Pulse
= 5 mA
125
Safe Operating Area, Junction-to-Case
T
GS
A
= 25 °C
150
DS(on)
V
1.5
minimum V
DS
- Drain-to-Source Voltage (V)
1
GS
at which r
10
DS(on)
0.20
0.16
0.12
0.08
0.04
60
48
36
24
12
0
0
0.001
0
is specified
Single Pulse Power, Junction-to-Ambient
I
D
On-Resistance vs. Gate-to-Source Voltage
1
1 ms
10 ms
1 s
100 ms
10 s
dc
= 5 A
2
0.01
V
100
GS
3
- Gate-to-Source Voltage (V)
Time (sec)
4
0.1
5
Vishay Siliconix
T
A
= 25 °C
Si4831BDY
6
7
1
www.vishay.com
T
A
8
= 125 °C
9
10
10
5