SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4831BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
8
0.0001
0.001
0.01
100
0.1
10
1
0
http://www.vishay.com/ppg?70483.
Reverse Current vs. Junction Temperature
25
50
T
J
- Temperature (°C)
75
30 V
100
500
400
300
200
100
0
0
10 V
125
150
6
V
KA
Capacitance
- Reverse Voltage (V)
12
18
10
1
0
0.0
24
0.1
30
T
V
J
Forward Voltage Drop
F
= 150 °C
- Forward Voltage Drop (V)
0.2
S-71696-Rev. A, 13-Aug-07
Document Number: 70483
0.4
T
0.5
J
= 25 °C
0.6