SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70483
S-71696-Rev. A, 13-Aug-07
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
J
I
V
C
= 25 °C, unless otherwise noted
rm
F
T
V
I
V
F
r
r
Test Conditions
= 30 V, T
= 3 A, T
= 30 V, T
V
V
I
F
r
r
= 30 V
= 15 V
= 3 A
J
J
J
= 125 °C
= 125 °C
= 75 °C
Min
Vishay Siliconix
0.485
0.008
0.42
Typ
102
0.4
6.5
Si4831BDY
www.vishay.com
Max
0.53
0.47
0.1
20
5
Unit
mA
pF
V
3