SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4831BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
6
0
0.0
0
0
I
D
= 5 A
3.6
0.5
6
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
I
- Total Gate Charge (nC)
GS
D
V
Gate Charge
- Drain Current (A)
DS
7.2
1.0
= 4.5 V
12
= 15 V
V
V
DS
GS
10.8
1.5
18
= 10 V
= 10 V
V
GS
V
= 10 thru 5 V
DS
14.4
= 20 V
4 V
2.0
24
3 V
18.0
2.5
30
1000
800
600
400
200
2.0
1.6
1.2
0.8
0.4
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
I
D
C
- 25
rss
= 5 A
0.8
6
V
V
GS
Transfer Characteristics
DS
0
T
T
C
T
J
J
J
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
= 25 °C
= 125 °C
25
Capacitance
1.6
12
C
50
S-71696-Rev. A, 13-Aug-07
iss
Document Number: 70483
2.4
18
V
- 55 °C
GS
75
= 10 V
100
V
GS
3.2
24
= 4.5 V
125
150
4.0
30