SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4831BDY-T1-E3
• Description: P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
• Manufacturer: Vishay

Specifications of SI4831BDY-T1-E3

• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4831BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
T
C
50
- Case Temperature (°C)
75
J(max)
8
6
5
3
2
0
100
0
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
150
Power Derating, Junction-to-Ambient
25
T
C
- Case Temperature (°C)
50
75
S-71696-Rev. A, 13-Aug-07
Document Number: 70483
100
125
150