BF512 T/R NXP Semiconductors, BF512 T/R Datasheet - Page 3

• Manufacturer Part Number: BF512 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF512 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Maximum Drain Gate Voltage: 20 V
• Continuous Drain Current: 30 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Channel Type: N
• Drain Current (max): 30mA
• Drain-gate Voltage (max): 20V
• Drain-source Volt (max): 20V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF512,215

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm  10 mm  0.7 mm.
STATIC CHARACTERISTICS
T
December 1997
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
V
I
V
I
S
D
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 40 C (note 1)
I
V
I
V
DSS
GSS
(BR)GDO
(P)GS



<
typ.
3
BF510
0.7
3.0
0.8
10
20
511
R
V
V
I
 I
P
T
T
D
2.5
7.0
1.5
stg
j
DS
DGO
tot
th j-a
10
20
G
512
2.2
10
20
12
=
max.
max.
max.
max.
max.
65 to  150 C
max.
6
BF510 to 513
Product specification
513
250 mW
150 C
430 K/W
20 V
20 V
30 mA
10 mA
10 nA
20 V
10
18
3 V
mA
mA