BF512 T/R NXP Semiconductors, BF512 T/R Datasheet - Page 5

• Manufacturer Part Number: BF512 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF512 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Maximum Drain Gate Voltage: 20 V
• Continuous Drain Current: 30 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Channel Type: N
• Drain Current (max): 30mA
• Drain-gate Voltage (max): 20V
• Drain-source Volt (max): 20V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF512,215

NXP Semiconductors
December 1997
handbook, halfpage
N-channel silicon field-effect transistors
(mW)
P tot
300
200
100
0
0
Fig.4 Power derating curve.
40
80
120
160
T amb (°C)
MDA245
200
5
BF510 to 513
Product specification