BF512 T/R NXP Semiconductors, BF512 T/R Datasheet - Page 4

RF JFET TAPE7 FET-RFSS

BF512 T/R

Manufacturer Part Number
BF512 T/R
Description
RF JFET TAPE7 FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF512 T/R

Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
20 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Channel Type
N
Drain Current (max)
30mA
Drain-gate Voltage (max)
20V
Drain-source Volt (max)
20V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF512,215
NXP Semiconductors
DYNAMIC CHARACTERISTICS
December 1997
handbook, halfpage
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure at optimum source admittance
N-channel silicon field-effect transistors
V
G
f = 100 MHz
Fig.2
GS
S
(pF)
C rs
= 1 mS; B
1.5
0.5
= 0 instead of I
1
0
0
V
I
f = 1 MHz; T
D
GS
= 5 mA for BF512 and BF513;
= 0 for BF510 and BF511;
4
S
= 3 mS;
typ
D
amb
= 5 mA
8
= 25 C.
12
16
V DS (V)
MDA275
20
V
V
C
g
C
 y
 y
 y
C
g
g
F
is
os
os
DS
DS
is
rs
os
fs
fs
fs



= 10 V; V
= 10 V; I
typ.
typ.
typ.
typ.
typ.
4
D
handbook, halfpage
GS
= 5 mA; T
Fig.3
= 0; T
(mS)
|y fs |
10
BF510
8
6
4
2
0
0
amb
100
BF510
0.4
0.5
2.5
3.5
1.5
V
values.
amb
60
35
DS
5
3
= 25 C for BF510 and BF511
= 10 V; f = 1 kHz; T
= 25 C for BF512 and BF513
511
0.4
0.5
4.0
5.5
1.5
BF511
5
90
80
55
5
3
BF512
512
100
0.4
0.5
4.0
6.0
5.0
1.5
60
70
5
3
10
BF510 to 513
amb
Product specification
= 25 C; typical
I D (mA)
BF513
513
120 S
0.4 pF
0.5 pF
3.5 mS
7.0 mS
5.0 mS
1.5 dB
MDA276
50 S
90 S
5 pF
3 pF
15

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