BLL1214-35 NXP Semiconductors, BLL1214-35 Datasheet - Page 2

• Manufacturer Part Number: BLL1214-35
• Description: RF MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLL1214-35

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLL1214-35,112

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2002 Sep 27
Pulsed class-AB;
t = 1 ms; = 10 %
V
V
P
T
T
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DS
GS
tot
L-band radar LDMOS driver transistor
MODE OF OPERATION
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source test circuit.
PARAMETER
1200 to 1400
(MHz)
f
under RF conditions; T
2
CONDITIONS
PINNING - SOT467C
V
(V)
36
DS
PIN
1
2
3
h
Fig.1 Simplified outline.
25 C
drain
gate
source, connected to flange
Top view
(W)
P
35
L
1
2
65
MIN.
DESCRIPTION
(dB)
>13
MBK584
G
Product specification
3
p
75
110
+150
200
BLL1214-35
15
MAX.
V
V
W
C
C
>43
(%)
UNIT
D