BLL1214-35 NXP Semiconductors, BLL1214-35 Datasheet - Page 6

• Manufacturer Part Number: BLL1214-35
• Description: RF MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLL1214-35

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLL1214-35,112

Philips Semiconductors
PACKAGE OUTLINE
2002 Sep 27
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
L-band radar LDMOS driver transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
inch
mm
OUTLINE
VERSION
SOT467C
0.184
0.155
4.67
3.94
A
0.220
0.210
5.59
5.33
H
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
0.364
0.356
9.25
9.04
D
0.365
0.355
9.27
9.02
D 1
0.233
0.227
5.92
5.77
JEDEC
E
D 1
U 1
REFERENCES
0.235
0.225
D
q
b
5.97
5.72
E 1
3
0
1
2
0.065
0.055
1.65
1.40
F
6
scale
18.54
17.02
EIAJ
0.73
0.67
w 2
H
5
p
M
C
0.135
0.125
3.43
3.18
C
M
p
10 mm
0.087
0.077
2.21
1.96
w 1
F
B
Q
M
A
14.27
0.562
M
q
B
M
20.45
20.19
0.805
0.795
U 1
E 1
PROJECTION
EUROPEAN
0.235
0.225
5.97
5.72
U 2
c
Q
0.010 0.020
0.25
w 1
BLL1214-35
Product specification
0.51
w 2
E
ISSUE DATE
99-12-06
99-12-28
SOT467C