BLL1214-35 NXP Semiconductors, BLL1214-35 Datasheet - Page 3

RF MOSFET Power BULK TNS-MICP

BLL1214-35

Manufacturer Part Number
BLL1214-35
Description
RF MOSFET Power BULK TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL1214-35

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Power Dissipation
110 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-467-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLL1214-35,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLL1214-35
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLL1214-35
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BLL1214-35112
Manufacturer:
NXP Semiconductors
Quantity:
135
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions; t
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under
the following conditions: V
Typical impedance
2002 Sep 27
Z
V
V
I
I
I
g
R
Pulsed class-AB;
t = 1 ms; = 10 %
j
DSS
DSX
GSS
fs
SYMBOL
th j-h
SYMBOL
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
L-band radar LDMOS driver transistor
MODE OF OPERATION
FREQUENCY
thermal impedance from junction to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
(GHZ)
1.20
1.25
1.30
1.35
1.40
PARAMETER
DS
= 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
PARAMETER
1200 to 1400
(MHz)
f
V
V
V
V
V
V
V
2.55
1.69
GS
DS
GS
GS
GS
DS
GS
6.48
3.88
3.28
h
= 0; I
= 10 V; I
= 0; V
= V
= 20 V; V
= 10 V; I
= 10 V; I
= 25 C; Z
( )
Z
3
S
GSth
V
j 1.48
j 0.51
(V)
36
j 3.9
j 3.2
j 2.4
CONDITIONS
DS
D
DS
= 0.7 mA
+ 9 V; V
D
D
D
= 36 V
= 70 mA
= 2.5 A
= 2.5 A
DS
th mb-h
T
h
= 0
p
= 25 C; note 1
= 1 ms, = 10 %.
(mA)
DS
I
50
DQ
= 0.65 K/W, unless otherwise specified.
CONDITIONS
= 10 V
(W)
75
4.5
10
P
35
MIN.
L
1.95 + j 3.27
1.90 + j 2.57
2.01 + j 2.27
2.20 + j 2.26
1.72 + j 2.35
2
300
TYP.
( )
(dB)
BLL1214-35
Z
Product specification
>13
VALUE
G
L
p
1.1
5.5
10
125
MAX.
UNIT
>43
(%)
K/W
V
V
A
nA
S
m
UNIT
A
D

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