BLL1214-35 NXP Semiconductors, BLL1214-35 Datasheet - Page 4

• Manufacturer Part Number: BLL1214-35
• Description: RF MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLL1214-35

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLL1214-35,112

Philips Semiconductors
2002 Sep 27
handbook, halfpage
handbook, halfpage
L-band radar LDMOS driver transistor
(1) f = 1.2 GHz.
t
Fig.2
(1) f = 1.2 GHz.
t
Fig.4
p
p
= 1 ms; = 10%.
= 1 ms; = 10%.
(W)
(%)
P L
60
40
20
50
40
30
20
10
0
0
0
0
Load power as a function of input power;
typical values.
Efficiency as a function of load power;
typical values.
0.2
10
(2) f = 1.3 GHz.
(2) f = 1.3 GHz.
0.4
20
(1)
(3)
(2)
(2)
0.6
30
(3) f = 1.4 GHz.
(3) f = 1.4 GHz.
(1)
(3)
0.8
40
P L (W)
P i (W)
MLD925
MLD923
50
1
4
handbook, halfpage
handbook, halfpage
(1) f = 1.2 GHz.
t
Fig.3
t
Fig.5
p
p
= 1 ms; = 10%.
= 1 ms; = 10%.
(dB)
(dB)
G p
G p
20
19
18
17
16
15
20
19
18
17
16
15
1.1
0
Power gain as a function of load power;
typical values.
Power gain and efficiency as functions of
frequency; typical values.
10
1.2
(2) f = 1.3 GHz.
20
1.3
G p
D
30
(3) f = 1.4 GHz.
BLL1214-35
Product specification
1.4
(1)
(2)
(3)
40
f (GHz)
P L (W)
MLD926
MLD924
1.5
50
60
50
40
30
20
10
(%)
D