RF MOSFET Power RF LDMOS 10W UHF

BLF2043F /T3

Manufacturer Part NumberBLF2043F /T3
DescriptionRF MOSFET Power RF LDMOS 10W UHF
ManufacturerNXP Semiconductors
BLF2043F /T3 datasheet
 


Specifications of BLF2043F /T3

Minimum Operating Temperature- 65 CMounting StyleSMD/SMT
Product TypeRF MOSFET PowerResistance Drain-source Rds (on)1.2 Ohms
Transistor PolarityN-ChannelConfigurationSingle
Drain-source Breakdown Voltage65 VGate-source Breakdown Voltage+/- 15 V
Continuous Drain Current2.2 AMaximum Operating Temperature+ 200 C
Package / CaseSOT-467-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBLF2043F,135  
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2043F
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Oct 19
M3D381
2002 Mar 05

BLF2043F /T3 Summary of contents

  • Page 1

    DISCRETE SEMICONDUCTORS DATA SHEET BLF2043F UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 19 M3D381 2002 Mar 05 ...

  • Page 2

    Philips Semiconductors UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS Communication transmitter applications in the ...

  • Page 3

    Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base th j-mb R thermal resistance from mounting base to heatsink th mb-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS ...

  • Page 4

    Philips Semiconductors UHF power LDMOS transistor APPLICATION INFORMATION RF performance in a common source class-AB circuit. T MODE OF OPERATION CW, class-AB (2-tone 2200 Ruggedness in class-AB operation The BLF2043F is capable of withstanding a load ...

  • Page 5

    Philips Semiconductors UHF power LDMOS transistor 15 handbook, halfpage (dB mA 2200 MHz 2200.1 MHz ...

  • Page 6

    Philips Semiconductors UHF power LDMOS transistor 8 handbook, halfpage 1.8 1 ...

  • Page 7

    Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 10 and 11) COMPONENT C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF C3, C4, C7, C9 Tekelec variable capacitor; type 37271 C5 multilayer ceramic chip ...

  • Page 8

    Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth BLF2043F 2.2 GHz input 60 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric ( The other side is unetched and serves ...

  • Page 9

    Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 ...

  • Page 10

    Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. ...

  • Page 11

    Philips Semiconductors UHF power LDMOS transistor 2002 Mar 05 NOTES 11 Product specification BLF2043F ...

  • Page 12

    Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...