BAS101S,215 NXP Semiconductors, BAS101S,215 Datasheet - Page 4

• Manufacturer Part Number: BAS101S,215
• Description: DIODE SW HI-VOLT DUAL SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS101S,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 100 mA
• Max Surge Current: 1 A
• Configuration: Dual
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060849215

NXP Semiconductors
7. Characteristics
BAS101_BAS101S_2
Product data sheet
Table 8.
T
[1]
[2]
Symbol Parameter
Per diode
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25
°
forward voltage
reverse current
diode capacitance
reverse recovery time
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 14 December 2009
F
= 30 mA to I
R
Conditions
I
V
V
V
= 30 mA; R
F
R
R
R
= 100 mA
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
L
= 100 Ω; measured at I
j
= 150 °C
BAS101; BAS101S
High-voltage switching diodes
[1]
[2]
Min
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
1.1
150
100
2
50
Unit
V
nA
μA
pF
ns
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