BAS101S,215 NXP Semiconductors, BAS101S,215 Datasheet - Page 9

• Manufacturer Part Number: BAS101S,215
• Description: DIODE SW HI-VOLT DUAL SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS101S,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 100 mA
• Max Surge Current: 1 A
• Configuration: Dual
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 150 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060849215

NXP Semiconductors
13. Revision history
Table 10.
BAS101_BAS101S_2
Product data sheet
Document ID
BAS101_BAS101S_2
Modifications:
BAS101_BAS101S_1
Revision history
Release date
20091214
20060908
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
“Pinning”: updated
Rev. 02 — 14 December 2009
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
BAS101; BAS101S
High-voltage switching diodes
Supersedes
BAS101_BAS101S_1
-
© NXP B.V. 2009. All rights reserved.
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